Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
Identifieur interne : 011C05 ( Main/Repository ); précédent : 011C04; suivant : 011C06Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
Auteurs : RBID : Pascal:00-0402817Descripteurs français
- Pascal (Inist)
- 8115G, 8105E, 6835B, 6855J, 7866F, 8115K, 7855C, 7840F, Etude expérimentale, Gallium phosphure, Indium phosphure, Agent surface, Propriété surface, Epitaxie phase vapeur, Précurseur, Bismuth, Analyse chimique structurale, Désorption, Bande interdite, Photoluminescence, Gallium composé, Indium composé, Méthode MOCVD, Semiconducteur III-V, Reconstruction surface, Topographie surface, Couche épitaxique semiconductrice, Spectre SIMS, Microscopie force atomique, Spectre visible, Croissance semiconducteur.
- Wicri :
- concept : Bismuth.
English descriptors
- KwdEn :
- Atomic force microscopy, Bismuth, Desorption, Energy gap, Experimental study, Gallium compounds, Gallium phosphides, III-V semiconductors, Indium compounds, Indium phosphides, MOCVD, Photoluminescence, Precursor, Secondary ion mass spectra, Semiconductor epitaxial layers, Semiconductor growth, Structural chemical analysis, Surface properties, Surface reconstruction, Surface topography, Surfactants, VPE, Visible spectra.
Abstract
The surfactant Bi has been added during organometallic vapor phase epitaxial growth (OMVPE) of GaInP using the precursor trimethylbismuth. The addition of a small amount of Bi during growth results in disordered material using conditions that would otherwise produce highly ordered GaInP. Significant changes in the surface structure are observed to accompany the disordering. Atomic force microscopy measurements show that Bi causes an order of magnitude increase in step velocity, leading to the complete elimination of three-dimensional islands for growth on singular (001) GaAs substrates, and a significant reduction in surface roughness. Surface photoabsorption measurements indicate that Bi reduces the number of [110] P dimers on the surface. Secondary ion mass spectroscopy measurements reveal that the Bi is rejected from the bulk, even though it changes the surface reconstruction. Clearly, Bi acts as a surfactant during OMVPE growth of GaInP. The difference in band gap energy caused by the reduction in order parameter during growth is measured using photoluminescence to be about 110 meV for layers grown on singular substrates. Disorder/order/disorder heterostructures were successfully produced in GaInP with a constant solid composition by modulating the TMBi flow rate during growth. © 2000 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 012766
Links to Exploration step
Pascal:00-0402817Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy</title><author><name sortKey="Jun, S W" uniqKey="Jun S">S. W. Jun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Lee, R T" uniqKey="Lee R">R. T. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Fetzer, C M" uniqKey="Fetzer C">C. M. Fetzer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Shurtleff, J K" uniqKey="Shurtleff J">J. K. Shurtleff</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Choi, C J" uniqKey="Choi C">C. J. Choi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712</wicri:regionArea><wicri:noRegion>Kwangju 506-712</wicri:noRegion></affiliation></author><author><name sortKey="Seong, T Y" uniqKey="Seong T">T.-Y. Seong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712</wicri:regionArea><wicri:noRegion>Kwangju 506-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0402817</idno><date when="2000-10-01">2000-10-01</date><idno type="stanalyst">PASCAL 00-0402817 AIP</idno><idno type="RBID">Pascal:00-0402817</idno><idno type="wicri:Area/Main/Corpus">012766</idno><idno type="wicri:Area/Main/Repository">011C05</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Bismuth</term><term>Desorption</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium phosphides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium phosphides</term><term>MOCVD</term><term>Photoluminescence</term><term>Precursor</term><term>Secondary ion mass spectra</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Structural chemical analysis</term><term>Surface properties</term><term>Surface reconstruction</term><term>Surface topography</term><term>Surfactants</term><term>VPE</term><term>Visible spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115G</term><term>8105E</term><term>6835B</term><term>6855J</term><term>7866F</term><term>8115K</term><term>7855C</term><term>7840F</term><term>Etude expérimentale</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Agent surface</term><term>Propriété surface</term><term>Epitaxie phase vapeur</term><term>Précurseur</term><term>Bismuth</term><term>Analyse chimique structurale</term><term>Désorption</term><term>Bande interdite</term><term>Photoluminescence</term><term>Gallium composé</term><term>Indium composé</term><term>Méthode MOCVD</term><term>Semiconducteur III-V</term><term>Reconstruction surface</term><term>Topographie surface</term><term>Couche épitaxique semiconductrice</term><term>Spectre SIMS</term><term>Microscopie force atomique</term><term>Spectre visible</term><term>Croissance semiconducteur</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Bismuth</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The surfactant Bi has been added during organometallic vapor phase epitaxial growth (OMVPE) of GaInP using the precursor trimethylbismuth. The addition of a small amount of Bi during growth results in disordered material using conditions that would otherwise produce highly ordered GaInP. Significant changes in the surface structure are observed to accompany the disordering. Atomic force microscopy measurements show that Bi causes an order of magnitude increase in step velocity, leading to the complete elimination of three-dimensional islands for growth on singular (001) GaAs substrates, and a significant reduction in surface roughness. Surface photoabsorption measurements indicate that Bi reduces the number of [110] P dimers on the surface. Secondary ion mass spectroscopy measurements reveal that the Bi is rejected from the bulk, even though it changes the surface reconstruction. Clearly, Bi acts as a surfactant during OMVPE growth of GaInP. The difference in band gap energy caused by the reduction in order parameter during growth is measured using photoluminescence to be about 110 meV for layers grown on singular substrates. Disorder/order/disorder heterostructures were successfully produced in GaInP with a constant solid composition by modulating the TMBi flow rate during growth. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>JUN (S. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (R. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHURTLEFF (J. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>CHOI (C. J.)</s1></fA11><fA11 i1="07" i2="1"><s1>SEONG (T.-Y.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>4429-4433</s1></fA20><fA21><s1>2000-10-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0402817</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The surfactant Bi has been added during organometallic vapor phase epitaxial growth (OMVPE) of GaInP using the precursor trimethylbismuth. The addition of a small amount of Bi during growth results in disordered material using conditions that would otherwise produce highly ordered GaInP. Significant changes in the surface structure are observed to accompany the disordering. Atomic force microscopy measurements show that Bi causes an order of magnitude increase in step velocity, leading to the complete elimination of three-dimensional islands for growth on singular (001) GaAs substrates, and a significant reduction in surface roughness. Surface photoabsorption measurements indicate that Bi reduces the number of [110] P dimers on the surface. Secondary ion mass spectroscopy measurements reveal that the Bi is rejected from the bulk, even though it changes the surface reconstruction. Clearly, Bi acts as a surfactant during OMVPE growth of GaInP. The difference in band gap energy caused by the reduction in order parameter during growth is measured using photoluminescence to be about 110 meV for layers grown on singular substrates. Disorder/order/disorder heterostructures were successfully produced in GaInP with a constant solid composition by modulating the TMBi flow rate during growth. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="06" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="07" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="08" i2="3"><s0>001B70H40F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8115K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>7840F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Agent surface</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Surfactants</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Propriété surface</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface properties</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>VPE</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Précurseur</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Precursor</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Bismuth</s0><s2>NC</s2></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Bismuth</s0><s2>NC</s2></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Analyse chimique structurale</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Structural chemical analysis</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Désorption</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Desorption</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Reconstruction surface</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Surface reconstruction</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Topographie surface</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Surface topography</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Spectre SIMS</s0></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Secondary ion mass spectra</s0></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Spectre visible</s0></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Visible spectra</s0></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="31" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fN21><s1>269</s1></fN21><fN47 i1="01" i2="1"><s0>0038M000146</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 011C05 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 011C05 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:00-0402817
|texte= Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
}}
| This area was generated with Dilib version V0.5.77. |  |